Report Title: Controllable Preparation of Oxide Functional Thin Films and Their Applications in Micro-nano Devices
Presenter: Lu Hongliang
Report Time: 14:00 p.m. on October 19, 2022
Report Venue: Offline - Conference Room 708, Comprehensive Building (Lu Hongliang)
Online - Tencent Meeting
Meeting ID: 690-954-901
Sponsoring Unit: School of Electrical Engineering
Biography of the Presenter: Lu Hongliang is a professor at the School of Microelectronics, Fudan University. He once studied in the National Laboratory for Microelectronics Materials and Devices in Italy and the University of Tokyo in Japan. In 2010, he was introduced as a talent and started working at the School of Microelectronics, Fudan University. Currently, his main research focuses on areas such as oxide memories and transistors related to advanced integrated circuit processes and devices, intelligent micro-nano sensors, and atomic layer deposition (ALD) technology. He has presided over more than 20 national projects, including national major special project No. 02, national key research and development programs, the innovation special zone of the Science and Technology Commission of the Central Military Commission, the 863 Program, as well as youth and general projects of the National Natural Science Foundation of China, and industry-university-research cooperation projects. He has participated in writing and publishing several professional books in the semiconductor field. He has also published more than 200 papers in international mainstream journals such as Advanced Materials, ACS Nano, Nano Energy, Applied Physics Letters, and IEEE Electron Device Letters. He has applied for more than 30 domestic invention patents and won the second prize of the "Technological Invention Award" in Shanghai and the Shanghai Vacuum Young Innovation Award.
Report Content: The report will mainly introduce the micro-nano electronic device platform of Fudan University, and the research achievements of the team led by him in using ALD technology to controllably prepare new composite oxide functional thin films for microelectronics and optoelectronics, as well as their applications in transistors, memories, sensors, etc.